SEMICONDUCTOR PROCESS SHEET
To provide a semiconductor process sheet suitable for efficiently manufacturing semiconductor packages in which the movement and warping of semiconductor chips are suppressed.SOLUTION: The semiconductor process sheet X has a double-sided adhesive sheet 10 and a thermosetting resin layer 20. The doub...
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Main Authors | , |
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Format | Patent |
Language | English Japanese |
Published |
24.06.2021
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Subjects | |
Online Access | Get full text |
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Summary: | To provide a semiconductor process sheet suitable for efficiently manufacturing semiconductor packages in which the movement and warping of semiconductor chips are suppressed.SOLUTION: The semiconductor process sheet X has a double-sided adhesive sheet 10 and a thermosetting resin layer 20. The double-sided adhesive sheet 10 includes a base material 11, a reduced adhesion adhesive layer 12, and for example, a pressure-sensitive adhesive layer 13, in a laminated structure between its adhesive surfaces 10a and 10b. The thermosetting resin layer 20 is peelably adhered to the adhesive side 10b of the double-sided adhesive sheet 10, for example. In the semiconductor process sheet X, the glass transition temperature of the thermosetting resin layer 20 is above the molding temperature of the semiconductor device encapsulant or above 120°C.SELECTED DRAWING: Figure 1
【課題】半導体チップの移動及び反りが抑制された半導体パッケージを効率よく製造するのに適した半導体プロセスシートを提供する。【解決手段】半導体プロセスシートXは両面粘着シート10と熱硬化性樹脂層20を備える。両面粘着シート10は、その粘着面10a及び10b間の積層構造中に基材11、粘着力低減型の粘着剤層12、及び、例えば感圧性の粘着剤層13を含む。熱硬化性樹脂層20は両面粘着シート10の例えば粘着面10b上に剥離可能に密着している。半導体プロセスシートXでは、熱硬化性樹脂層20のガラス転移温度が、半導体素子封止材の成形温度以上又は120℃以上である。【選択図】図1 |
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Bibliography: | Application Number: JP20190224970 |