COMPOSITE BRIDGE DIE-TO-DIE INTERCONNECTION FOR INTEGRATED CIRCUIT PACKAGE
To provide a multi-chip package (MCP) integrated circuit device having a high interconnection density between a plurality of chips without a power transmission problem such as an inductance loop and an impedance peak profile.SOLUTION: An integrated circuit (IC) package 300 comprises a composite brid...
Saved in:
Main Authors | , , , , |
---|---|
Format | Patent |
Language | English Japanese |
Published |
17.06.2021
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | To provide a multi-chip package (MCP) integrated circuit device having a high interconnection density between a plurality of chips without a power transmission problem such as an inductance loop and an impedance peak profile.SOLUTION: An integrated circuit (IC) package 300 comprises a composite bridge die-to-die interconnection 332 which is on a die surface 343 of an IC package substrate 342, and is contacted to a receiving device 312 and a receiving device 368, existed in a first IC die 10, a second IC die 20, and a mold material 320. The mold material 320 is also contacted to the IC die 10 and the IC die 20.SELECTED DRAWING: Figure 3
【課題】インダクタンスループ及びインピーダンスピークプロファイルのような電力送達問題のない、複数チップ間の高い相互接続密度を有するマルチチップパッケージ(MCP)集積回路デバイスを提供する。【解決手段】集積回路(IC)パッケージ300において、ICパッケージ基板342のダイ面343上にあり、第1のICダイ10と、第2のICダイ20と、モールド材料320内にある受動デバイス312及び受動デバイス368と、に接触しているコンポジットブリッジダイツーダイ相互接続332を備える。モールド材料320もまた、ICダイ10と、ICダイ20とに接触している。【選択図】図3 |
---|---|
Bibliography: | Application Number: JP20200153362 |