COMPOSITE BRIDGE DIE-TO-DIE INTERCONNECTION FOR INTEGRATED CIRCUIT PACKAGE

To provide a multi-chip package (MCP) integrated circuit device having a high interconnection density between a plurality of chips without a power transmission problem such as an inductance loop and an impedance peak profile.SOLUTION: An integrated circuit (IC) package 300 comprises a composite brid...

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Main Authors OOI PING PING, LIM SEOK LING, CHEAH BOK ENG, JENNY SHIO YIN ONG, JACKSON CHUNG PENG KONG
Format Patent
LanguageEnglish
Japanese
Published 17.06.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide a multi-chip package (MCP) integrated circuit device having a high interconnection density between a plurality of chips without a power transmission problem such as an inductance loop and an impedance peak profile.SOLUTION: An integrated circuit (IC) package 300 comprises a composite bridge die-to-die interconnection 332 which is on a die surface 343 of an IC package substrate 342, and is contacted to a receiving device 312 and a receiving device 368, existed in a first IC die 10, a second IC die 20, and a mold material 320. The mold material 320 is also contacted to the IC die 10 and the IC die 20.SELECTED DRAWING: Figure 3 【課題】インダクタンスループ及びインピーダンスピークプロファイルのような電力送達問題のない、複数チップ間の高い相互接続密度を有するマルチチップパッケージ（ＭＣＰ）集積回路デバイスを提供する。【解決手段】集積回路（ＩＣ）パッケージ３００において、ＩＣパッケージ基板３４２のダイ面３４３上にあり、第１のＩＣダイ１０と、第２のＩＣダイ２０と、モールド材料３２０内にある受動デバイス３１２及び受動デバイス３６８と、に接触しているコンポジットブリッジダイツーダイ相互接続３３２を備える。モールド材料３２０もまた、ＩＣダイ１０と、ＩＣダイ２０とに接触している。【選択図】図３
Bibliography:Application Number: JP20200153362