CVD APPARATUS FOR SYNTHESIZING DIAMOND

• Main Authors: MORI KUNIHIKO, KOJIMA YOSHIYASU, ARIYADA OSAMU
• Format: Patent
• Language: English; Japanese
• Published: 17.06.2021
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS THEREOF; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a CVD apparatus for synthesizing diamond capable of uniformly growing diamond in a wider area at a high speed.SOLUTION: A CVD apparatus for synthesizing diamond 100 forming a diamond film on a surface of a substrate S includes: a discharge chamber 1 constituted of an upper hemispherical surface 11 having a flat dome shape and a lower hemispherical surface 12 having a flat dome shape; a coaxial antenna member 2 which goes through the lower hemispherical surface 12, extends along a center axis line A of the discharge chamber 1, and feeds a microwave to an inside of the discharge chamber 1; a disk-shaped resonant antenna 3 which is attached to a tip part of the coaxial antenna member 2 in the discharge chamber 1 and expands coaxially with the center axis line A along a maximum diameter surface 13 of the discharge chamber 1; and a mount table 4 which has a circular contour and is arranged coaxially with the center axis line A at a center of an upper surface 31 of the resonant antenna 3 and to which a substrate is mounted.SELECTED DRAWING: Figure 1 【課題】より広い面積で高速かつ均一にダイヤモンドを成長させることができるダイヤモンド合成用ＣＶＤ装置の提供。【解決手段】基板Ｓの表面にダイヤモンド膜を形成するダイヤモンド合成用ＣＶＤ装置１００であって、扁平なドーム形状を有する上半球面１１と扁平なドーム形状を有する下半球面１２とで構成された放電室１と、下半球面１２を貫通して放電室１の中心軸線Ａに沿って延在し、放電室１の内部へマイクロ波を供給する同軸アンテナ部材２と、放電室内１で、同軸アンテナ部材２の先端部に取り付けられ、放電室１の最大直径面１３に沿って中心軸線Ａと同心に拡がった円盤状の共振アンテナ３と、円形外周を有し、共振アンテナ３の上面３１の中央に中心軸線Ａと同心に配置された、基板が載置される載置台４とを備えるダイヤモンド合成用ＣＶＤ装置。【選択図】図１