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• Main Authors: TANAKA KOICHIRO, YAMAZAKI SHUNPEI, ARAO TATSUYA, SHIMOMURA AKIHISA, ISOBE ATSUO, MIYAIRI HIDEKAZU, KAWANABE CHIHO, AKIBA MAI
• Format: Patent
• Language: English; Japanese
• Published: 10.06.2021
• Subjects: ADVERTISING; BASIC ELECTRIC ELEMENTS; CRYPTOGRAPHY; DISPLAY; DISPLAYING; EDUCATION; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; LABELS OR NAME-PLATES; PHYSICS; SEALS; SEMICONDUCTOR DEVICES; SIGNS

To provide a semiconductor device which increases a depletion region of a channel formation region and achieves high current drive capability.SOLUTION: A semiconductor device comprises: island-like semiconductor regions; a gate insulation film arranged to cover lateral faces and top faces of the island-like semiconductor regions; and a gate electrode arranged to cover the lateral faces and the top faces of the island-like semiconductor regions via the gate insulation film, in which the lateral faces and the top faces of the island-like semiconductor regions function as channel formation regions.SELECTED DRAWING: Figure 22 【課題】チャネル形成領域の空乏化領域を増やし、電流駆動能力の高い半導体装置を提供する。【解決手段】島状の半導体領域と、前記島状の半導体領域の側面及び上面を覆って設けられたゲート絶縁膜と、前記ゲート絶縁膜を介して前記島状の半導体領域の前記側面及び前記上面を覆って設けられたゲート電極とを有し、前記島状の半導体領域の前記側面及び前記上面はチャネル形成領域として機能する半導体装置である。【選択図】図２２