SEMICONDUCTOR NANOPARTICLES, METHOD OF PRODUCING SEMICONDUCTOR NANOPARTICLES, AND LIGHT-EMITTING DEVICE

• Main Authors: KISHI MARINO, UEMATSU TARO, TORIMOTO TSUKASA, KUWAHATA SUSUMU, OYAMATSU DAISUKE, KAMEYAMA TATSUYA
• Format: Patent
• Language: English; Japanese
• Published: 10.06.2021
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NANOTECHNOLOGY; NATURAL RESINS; PAINTS; PERFORMING OPERATIONS; POLISHES; SEMICONDUCTOR DEVICES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

To provide a ternary or quaternary semiconductor nanoparticle that enables the band-edge emission and a less toxic composition.SOLUTION: A semiconductor nanoparticle is provided that contains Ag, In, and S and has an average particle size of 50 nm or less, wherein the ratio of the number of atoms of Ag to the total number of atoms of Ag and In is 0.320 or more and 0.385 or less, the ratio of the number of atoms of S to the total number of atoms of Ag and In is 1.20 or more and 1.45 or less. When irradiated with light having a wavelength in a range of 350 nm to 500 nm, the semiconductor nanoparticle exhibits the band-edge emission.SELECTED DRAWING: None 【課題】バンド端発光可能であり、かつ低毒性の組成とすることが可能な三元系または四元系の半導体ナノ粒子を提供する。【解決手段】Ａｇ、Ｉｎ、およびＳを含む、平均粒径が５０ｎｍ以下の半導体ナノ粒子であって、ＡｇとＩｎの原子数の合計に対するＡｇの原子数の比が０．３２０以上０．３８５以下であり、ＡｇとＩｎの原子数の合計に対するＳの原子数の比が１．２０以上１．４５以下であり、３５０〜５００ｎｍの範囲内にある波長の光が照射されると、バンド端発光する、半導体ナノ粒子。【選択図】なし