RADAR DEVICE

• Main Authors: HIRATA SHUJI, TAINAKA YUSUKE, NIIOBI AKIRA, MATSUNOSHITA MASAHIRO, MUNEOKA ATSUSHI
• Format: Patent
• Language: English; Japanese
• Published: 03.06.2021
• Subjects: ANALOGOUS ARRANGEMENTS USING OTHER WAVES; ANTENNAS, i.e. RADIO AERIALS; BASIC ELECTRIC ELEMENTS; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION ORRERADIATION OF RADIO WAVES; MEASURING; PHYSICS; RADIO DIRECTION-FINDING; RADIO NAVIGATION; SEMICONDUCTOR DEVICES; TESTING

To provide a radar device in which the positional relation of a high-frequency conductive layer and an adhesive to a semiconductor component can be set as appropriate.SOLUTION: A radar device 1 includes a base material 2 where a plurality of high-frequency conductive layers 21 and 22 are provided on a front surface 201, a semiconductor component 3 in contact with the high-frequency conductive layers 21 and 22 through a conductive member, and an adhesive 4 that is used to attach the semiconductor component 3 to the front surface 201 of the base material 2. All the high-frequency conductive layers 21 and 22, when at least any of them is bent in a plane of the front surface 201, are provided ranging from inner end parts 211 and 221 of the front surface 201 opposite to a bottom surface 301 of the semiconductor component 3 to outer end parts 212 and 222 positioned on a first direction D1 side relative to a first side surface 302A of the semiconductor component 3 facing the first direction D1. The adhesive 4 is in contact with the front surface 201 excluding a part where the high-frequency conductive layers 21 and 22 are formed, and side surfaces 302A and 302B of the semiconductor component 3.SELECTED DRAWING: Figure 4 【課題】半導体部品に対する、高周波導体層及び接着剤の配置関係を適切に設定することができるレーダ装置を提供する。【解決手段】レーダ装置１は、表側面２０１に複数の高周波導体層２１，２２が設けられた基材２と、高周波導体層２１，２２に導電部材を介して接触する半導体部品３と、半導体部品３を基材２の表側面２０１に接着する接着剤４とを備える。複数の高周波導体層２１，２２のすべては、少なくともいずれかが表側面２０１の平面内において屈曲することにより、表側面２０１における、半導体部品３の底面３０１と対向する内側端部２１１，２２１から、半導体部品３の第１方向Ｄ１に向けられた第１側面３０２Ａよりも第１方向Ｄ１の側に位置する外側端部２１２，２２２まで設けられている。接着剤４は、複数の高周波導体層２１，２２の形成部位を除く表側面２０１と、半導体部品３の側面３０２Ａ，３０２Ｂとに接触している。【選択図】図４