CORE-SHELL TYPE QUANTUM DOT AND METHOD FOR MANUFACTURING CORE-SHELL TYPE QUANTUM DOT

• Main Authors: NOJIMA YOSHIHIRO, AOKI SHINJI, TOBISHIMA KAZUYA
• Format: Patent
• Language: English; Japanese
• Published: 03.06.2021
• Subjects: CHEMISTRY; COMPOUNDS THEREOF; INORGANIC CHEMISTRY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; METALLURGY; NANOTECHNOLOGY; NON-METALLIC ELEMENTS; PERFORMING OPERATIONS; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

To improve fluorescence emission efficiency of a quantum dot by employing a group III-V semiconductor nanocrystal as a core.SOLUTION: A core-shell type quantum dot includes: a semiconductor nanocrystal core comprising group III-V elements including at least In and P; and a single or a plurality of semiconductor nanocrystal shells comprising group II-VI elements and covering the semiconductor nanocrystal core; and a buffer layer including a semiconductor nanocrystal comprising group II-V elements between the semiconductor nanocrystal core and the semiconductor nanocrystal shell.SELECTED DRAWING: Figure 1 【課題】第ＩＩＩ−Ｖ族半導体ナノ結晶をコアとして用いた量子ドットの蛍光発光効率を向上することを目的とする。【解決手段】少なくともＩｎ及びＰを含み、第ＩＩＩ−Ｖ族元素を構成元素とする半導体ナノ結晶コアと、前記半導体ナノ結晶コアを被覆する、第ＩＩ−ＶＩ族元素を構成元素とする単一又は複数の半導体ナノ結晶シェルとを含むコアシェル型量子ドットであって、前記半導体ナノ結晶コアと前記半導体ナノ結晶シェルとの間に、第ＩＩ−Ｖ族元素を構成元素とする半導体ナノ結晶を含むバッファー層を有するコアシェル型量子ドット。【選択図】図１