SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

• Main Authors: HONDA MASANOBU, HISAMATSU TORU, KUMAGAI YOSHIE
• Format: Patent
• Language: English; Japanese
• Published: 20.05.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To continuously control the coverage of a film formed on a substrate.SOLUTION: A substrate processing method includes a step a) of exposing a substrate having a pattern formed on the surface to first reaction species and adsorbing the first reaction species on the surface of the substrate in a chamber, a step b) of exposing the substrate to plasma formed from second reaction species to form a film on the surface of the substrate in the chamber, and a step c) of repeating a process including the step a) and the step b) two or more times by changing the retention amount of the first reaction species at the start of the step b).SELECTED DRAWING: Figure 11 【課題】基板に形成する膜のカバレッジを連続的に制御する。【解決手段】基板処理方法は、ａ）チャンバ内で、表面にパターンが形成された基板を第１の反応種に晒して、第１の反応種を基板の表面に吸着させる工程を含む。また、基板処理方法は、ｂ）チャンバ内で、基板を第２の反応種から形成したプラズマに晒して、基板の表面に膜を形成する工程を含む。また、基板処理方法は、ｃ）工程ａ）と工程ｂ）とを含む処理を、工程ｂ）の開始時における第１の反応種の滞留量を変えて２回以上繰り返す工程を含む。【選択図】図１１