REGENERATION METHOD OF SiC SUBSTRATE

• Main Author: ARIFUKU NORIHISA
• Format: Patent
• Language: English; Japanese
• Published: 20.05.2021
• Subjects: BASIC ELECTRIC ELEMENTS; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; PERFORMING OPERATIONS; POLISHING; SEMICONDUCTOR DEVICES; TRANSPORTING

To provide a regeneration method of a SiC substrate that reduces the man-hours required for regeneration of the SiC substrate and further increases the number of times that the SiC substrate can be regenerated.SOLUTION: A regeneration method of a SiC substrate 1 with a nitride layer formed on the surface side includes a holding step of holding the back surface side of a SiC substrate on a holding surface 20a of a chuck table 20 of a polishing apparatus, a removal step of removing the nitride layer 3 by polishing the surface side of the SiC substrate with a polishing pad while supplying an acidic polishing liquid 58 from the polishing pad 48 of the polishing device, and a cleaning step of cleaning the SiC substrate.SELECTED DRAWING: Figure 3 【課題】ＳｉＣ基板の再生に要する工数を低減し、更に、ＳｉＣ基板を再生できる回数を増やすＳｉＣ基板の再生方法を提供する。【解決手段】表面側に窒化物層が形成されたＳｉＣ基板１の再生方法であって、研磨装置のチャックテーブル２０の保持面２０ａで該ＳｉＣ基板の裏面側を保持する保持工程と、研磨装置の研磨パッド４８から酸性の研磨液５８を供給しながら研磨パッドを用いてＳｉＣ基板の表面側を研磨して、窒化物層３を除去する除去工程と、ＳｉＣ基板を洗浄する洗浄工程と、を備える。【選択図】図３