MANUFACTURING METHOD OF SUSCEPTOR, SUSCEPTOR AND HEAT TREATMENT APPARATUS

• Main Authors: UEDA AKIMINE, FUSE KAZUHIKO, MIYAKE HIROSHI
• Format: Patent
• Language: English; Japanese
• Published: 20.05.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a technique capable of improving uniformity of in-plane temperature distribution of a substrate.SOLUTION: In-plane temperature distribution is calculated, which is generated in the semiconductor wafer when light irradiation is performed from the lower side by a halogen lamp in the state where a semiconductor wafer is supported in a susceptor 74. A partial region of a surface of the susceptor 74 opposed to a high-temperature region of the semiconductor wafer at a predetermined temperature or higher in the in-plane temperature distribution is made into a rough surface. The step of acquiring the temperature distribution of the semiconductor wafer supported by such a susceptor 74 and the step of applying surface roughening processing to the partial region of the susceptor 74 on the basis of the temperature distribution are repeated a plurality of times, thereby forming a plurality of rough surface regions in the susceptor 74. The light irradiation is performed from the halogen lamp while supporting the semiconductor wafer in the susceptor 74, thereby improving uniformity of the in-plane temperature distribution of the semiconductor wafer.SELECTED DRAWING: Figure 19 【課題】基板の面内温度分布の均一性を高めることができる技術を提供する。【解決手段】サセプタ７４に半導体ウェハーを支持した状態でハロゲンランプにより下方から光照射を行ったときに半導体ウェハーに生じる面内温度分布を求める。その面内温度分布において所定温度以上となる半導体ウェハーの高温領域に対向するサセプタ７４の表面の一部領域を粗面とする。このようなサセプタ７４に支持された半導体ウェハーの温度分布を取得する工程と、その温度分布に基づいてサセプタ７４の一部領域に粗面化加工を施す工程とを複数回繰り返すことにより、サセプタ７４に複数の粗面領域が形成される。そのサセプタ７４に半導体ウェハーを支持してハロゲンランプから光照射を行うことにより、半導体ウェハーの面内温度分布の均一性を高めることができる。【選択図】図１９