SINGLE RING DESIGN FOR HIGH YIELD, SUBSTRATE EXTREME EDGE DEFECT REDUCTION IN ICP PLASMA PROCESSING CHAMBER

• Main Authors: LANE ADAM, DAO HUUTRI, NG SIU TANG, LEE CHANGHUN, WILLWERTH MICHAEL D
• Format: Patent
• Language: English; Japanese
• Published: 30.04.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a single ring process kit for use in a plasma processing chamber, comprising a circular ring-shaped body with an inner surface, closest in proximity to a centerline of the body, and an outer surface opposite the inner surface.SOLUTION: In a plasma processing chamber, a ring body of a cove...