SEMICONDUCTOR DEVICE

• Main Authors: NISHIO JOJI, SHIMIZU TATSUO
• Format: Patent
• Language: English; Japanese
• Published: 22.04.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device that can obtain stable characteristics.SOLUTION: According to one embodiment, a semiconductor device includes a substrate containing silicon carbide, a first semiconductor member with a first conductivity type containing silicon carbide, and a second semiconductor member with a second conductivity type containing silicon carbide. A first direction from the substrate to the first semiconductor member is along a [0001] direction of the substrate. The second semiconductor member includes a first region, a second region, and a third region. The first semiconductor member includes a fourth region. A second direction from the first region to the second region is along a [1-100] direction of the substrate. The fourth region exists between the first region and the second region in the second direction. A third direction from the fourth region to the third region is along a [11-20] direction of the substrate.SELECTED DRAWING: Figure 1 【課題】安定した特性が得られる半導体装置を提供する。【解決手段】実施形態によれば、半導体装置は、炭化珪素を含む基体と、炭化珪素を含む第１導電形の第１半導体部材と、炭化珪素を含む第２導電形の第２半導体部材と、を含む。前記基体から前記第１半導体部材への第１方向は、前記基体の［０００１］方向に沿う。前記第２半導体部材は、第１領域、第２領域及び第３領域を含む。前記第１半導体部材は、第４領域を含む。前記第１領域から前記第２領域への第２方向は、前記基体の［１−１００］方向に沿う。前記第４領域は、前記第２方向において前記第１領域及び前記第２領域との間にある。前記第４領域から前記第３領域への第３方向は、前記基体の［１１−２０］方向に沿う。【選択図】図１