PLASMA PROCESSING APPARATUS

• Main Authors: EHARA HIROKI, IKEDA TARO
• Format: Patent
• Language: English; Japanese
• Published: 22.04.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To prevent abnormal discharge in a gas nozzle.SOLUTION: A plasma processing apparatus is provided that comprises: a processing container; and a plurality of gas nozzles 16 which protrude from top walls and/or side walls constituting the processing container and have gas supply holes 16a for supplying gas into the processing container. The plurality of gas nozzles 16 have diametrically enlarged portions 16a2 enlarged from holes 16a1 of the gas supply holes 16a at the distal ends of the gas supply holes 16a of the plurality of gas nozzles and opened into a processing space.SELECTED DRAWING: Figure 8 【課題】ガスノズルにおいて異常放電を防止する。【解決手段】処理容器と、前記処理容器を構成する天壁及び／又は側壁から突出し、前記処理容器内にガスを供給するガス供給孔１６ａを有する複数のガスノズル１６とを備え、複数の前記ガスノズル１６は、複数の前記ガスノズルのガス供給孔１６ａの先端にて前記ガス供給孔１６ａの細孔１６ａ１から拡大し、処理空間に開口する拡径部１６ａ２を有する、プラズマ処理装置が提供される。【選択図】図８