HARDMASK COMPOSITION, HARDMASK LAYER AND METHOD OF FORMING PATTERNS

• Main Authors: KIM YOUNG KEUN, JUNG HYEON-IL, KIM SEUNG-HYUN, PARK SANGCHOL, KIM SANGMI
• Format: Patent
• Language: English; Japanese
• Published: 22.04.2021
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; THEIR PREPARATION OR CHEMICAL WORKING-UP

To provide a hardmask composition that can improve the solubility of a polymer and can also improve the etch resistance and film density of a hardmask layer.SOLUTION: A hardmask composition comprises a polymer including a structural unit represented by Chemical Formula 1 and a solvent. There are also provided a hardmask layer and a method of forming patterns.SELECTED DRAWING: None 【課題】重合体の溶解度を向上でき、さらにハードマスク層の耐エッチング性および膜密度を改善できるハードマスク組成物の提供。【解決手段】下記化学式１で表される構造単位を含む重合体、および溶媒を含むハードマスク組成物、ハードマスク層、ならびにパターン形成方法。【選択図】なし