SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

• Main Authors: SUNAKA IKUO, MINAMI TERUOMI, KASAHARA MASATOSHI, KAMIMURA FUMIHIRO
• Format: Patent
• Language: English; Japanese
• Published: 08.04.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To enhance in-plane uniformity of liquid processing while suppressing a consumption amount of a processing liquid.SOLUTION: A substrate processing method comprises: a substrate temperature rising step for rising a temperature of a substrate by heating the substrate; a liquid film formation step for, after the substrate temperature rising step, forming a liquid film of a pre-wet liquid on a first surface of the substrate by supplying the pre-wet liquid to the first surface of the substrate while heating the substrate and rotating the substrate at a first number of revolutions; a chemical liquid processing step for, after the liquid film formation step, processing the first surface of the substrate with a chemical liquid by supplying the chemical liquid to the first surface of the substrate while heating the substrate and rotating the substrate at a second number of revolutions lower than the first number of revolutions; and a substrate temperature lowering step for, after the chemical liquid processing step, lowering the temperature of the substrate.SELECTED DRAWING: Figure 9 【課題】処理液の消費量を抑制しつつ液処理の面内均一性を高める。【解決手段】基板処理方法は、基板を加熱して前記基板の温度を上昇させる基板昇温工程と、前記基板昇温工程の後に、前記基板を加熱するとともに第１回転数で回転させながら前記基板の第１面にプリウエット液を供給して、前記基板の第１面に前記プリウエット液の液膜を形成する液膜形成工程と、前記液膜形成工程の後に、前記基板を加熱するとともに前記第１回転数よりも低い第２回転数で回転させながら前記基板の第１面に薬液を供給して、前記基板の第１面を前記薬液で処理する薬液処理工程と、前記薬液処理工程の後に前記基板の温度を低下させる基板降温工程と、を備えている。【選択図】図９