SILICON CARBIDE SEMICONDUCTOR DEVICE

• Main Authors: YAMASHITA YUSUKE, KATO TAKEHIRO, UEHARA JUNICHI, HAYAMA YUSUKE
• Format: Patent
• Language: English; Japanese
• Published: 08.04.2021
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To suppress basal surface dislocation contained in a silicon carbide single crystal substrate from developing to a layer defect.SOLUTION: The silicon carbide semiconductor device, including a silicon carbide single crystal substrate 10 having one face 10a and another face 10b on the opposite side to the one face 10a and an epitaxial layer 12 constituted of silicon carbide arranged on the one face 10a, is structured so that more impurity element 11a than the another face 10b side is arranged on the one face 10a side in the silicon carbide single crystal substrate 10.SELECTED DRAWING: Figure 1 【課題】炭化珪素単結晶基板に含まれる基底面転位が積層欠陥へ拡張することを抑制する。【解決手段】一面１０ａおよび一面１０ａと反対側の他面１０ｂを有する炭化珪素単結晶基板１０と、一面１０ａ上に配置された炭化珪素で構成されるエピタキシャル層１２と、を備える炭化珪素半導体装置において、炭化珪素単結晶基板１０には、一面１０ａ側に、他面１０ｂ側よりも多い不純物元素１１ａが配置されるようにする。【選択図】図１