SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STORAGE DEVICE

• Main Author: KIKUSHIMA FUMIE
• Format: Patent
• Language: English; Japanese
• Published: 25.03.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor storage device than can enhance electrical characteristics.SOLUTION: A semiconductor storage device includes a substrate, a plurality of first conductive layers, a second conductive layer, a first columnar body, and a second columnar body. The plurality of first conductive layers are laminated in a first direction above the substrate. The second conductive layer is arranged above the plurality of first conductive layers. The first columnar body extends in the first direction through the plurality of first conductive layers. The first columnar body has a first semiconductor portion including a single crystal first semiconductor material. The second columnar body extends in the first direction through the second conductive layer. The second columnar body has an insulating portion that includes an insulator and serves as a shaft, and a second semiconductor portion that is arranged on the outer periphery of the insulating portion when viewed in the first direction. The second semiconductor portion is in contact with the semiconductor portion and includes a polycrystalline second semiconductor material.SELECTED DRAWING: Figure 2 【課題】電気的特性の向上を図ることができる半導体記憶装置を提供することである。【解決手段】実施形態の半導体記憶装置は、基板と、複数の第１導電層と、第２導電層と、第１柱状体と、第２柱状体とを持つ。前記複数の第１導電層と、前記基板の上方で第１方向に積層されている。前記第２導電層は、前記複数の第１導電層の上方に配置されている。前記第１柱状体は、前記複数の第１導電層内を前記第１方向に延びている。前記第１柱状体は、単結晶の第１半導体材料を含む第１半導体部を有する。前記第２柱状体は、前記第２導電層内を前記第１方向に延びている。前記第２柱状体は、絶縁体を含んで軸となる絶縁部と、前記第１方向から見て前記絶縁部の外周に配置された第２半導体部と、を有する。前記第２半導体部は、前記半導体部と接し、且つ多結晶の第２半導体材料を含む。【選択図】図２