SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• Main Authors: UEDA DAISUKE, KODAMA KAZUKI
• Format: Patent
• Language: English; Japanese
• Published: 25.03.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a manufacturing method of a semiconductor device having a contact electrode capable of reducing contact resistance with a group III nitride.SOLUTION: A manufacturing method of a semiconductor device according to the present invention includes: forming, for example, a first inorganic film...