SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• Main Authors: UEDA DAISUKE, KODAMA KAZUKI
• Format: Patent
• Language: English; Japanese
• Published: 25.03.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a manufacturing method of a semiconductor device having a contact electrode capable of reducing contact resistance with a group III nitride.SOLUTION: A manufacturing method of a semiconductor device according to the present invention includes: forming, for example, a first inorganic film and a second inorganic film of silicon oxide on a group III nitride layer; isotropically etching the first inorganic film with, for example, hydrofluoric acid using the second inorganic film as a mask to pattern the first inorganic film after patterning the second inorganic film; forming an n-type GaN and a conductive film by a PLD method; and forming a laminated electrode with the n-type GaN and the conductive film in a self-aligned manner by removing the first inorganic film and the second inorganic film. This manufacturing method can be applied to various semiconductor devices.SELECTED DRAWING: Figure 1 【課題】ＩＩＩ族窒化物との接触抵抗を低減できるコンタクト電極を有する半導体装置の製造方法を提供することを課題とする。【解決手段】本発明にかかる半導体装置の製造方法は、ＩＩＩ族窒化物層上に例えば酸化シリコンの第１の無機膜と第２の無機膜を形成し、第２の無機膜をパターニングした後に、第２の無機膜をマスクに第１の無機膜を、例えばフッ酸により等方的にエッチングして第１の無機膜をパターニングし、ＰＬＤ法によりｎ型ＧａＮ及び導電性膜を成膜し、第１の無機膜及び第２無機膜を除去することで自己整合的にｎ型ＧａＮ及び導電性膜との積層電極を形成することを含む。本製造方法は、種々の半導体装置に適用することができる。【選択図】 図１