SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING DEVICE

• Main Authors: HAYASHI SHIGEO, NOGOME MASANOBU, HIROKI HIRANORI, MITSUI YASUTOMO, KUNO YASUMITSU, KUME MASAHIRO
• Format: Patent
• Language: English; Japanese
• Published: 04.03.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor light-emitting element and the like having high heat dissipation.SOLUTION: A semiconductor light-emitting element 21 comprises: a semiconductor laminate 30 that includes an n-type layer 32, a p-type layer 36, and an n exposed part 30e; a p wiring electrode layer 42 that is arranged on the p-type layer 36; an isolation layer 44 that continuously covers an inner surface 30s of the n exposed part 30e and a part of an upper part of the p wiring electrode layer 42 and has an opening part 44a; an n wiring electrode layer 46 that contacts with the n-type layer 32 in the opening part 44a and is arranged above the p-type layer 36 and the p wiring electrode layer 42 via the isolation layer 44; and a first n connection member 51. The first n connection member 51 is a bump made of an alloy composed of one of Au, Ag, Al, and Cu or a combination thereof and is connected with the n wiring electrode layer 46 in a first n terminal area 51r. The n wiring electrode layer 46 and the p-type layer 36 are arranged below the first n terminal area 51r in a cross section parallel to a lamination direction of the semiconductor laminate 30.SELECTED DRAWING: Figure 2A 【課題】放熱性が高い半導体発光素子等を提供する。【解決手段】半導体発光素子２１は、ｎ型層３２と、ｐ型層３６とを有する半導体積層体３０であって、ｎ露出部３０ｅを有する半導体積層体３０と、ｐ型層３６上に配置されたｐ配線電極層４２と、ｎ露出部３０ｅの内側面３０ｓと、ｐ配線電極層４２の上方の一部とを連続的に覆い、開口部４４ａを有する絶縁層４４と、開口部４４ａにおいてｎ型層３２に接し、絶縁層４４を介してｐ型層３６及びｐ配線電極層４２の上方に配置されたｎ配線電極層４６と、第１のｎ接続部材５１とを有し、第１のｎ接続部材５１は、Ａｕ、Ａｇ、Ａｌ、Ｃｕのいずれか、又は、それらの組み合わせからなる合金で構成されるバンプであり、第１のｎ端子領域５１ｒにおいてｎ配線電極層４６と接続され、半導体積層体３０の積層方向に平行な断面において、第１のｎ端子領域５１ｒの下方に、ｎ配線電極層４６及びｐ型層３６が配置される。【選択図】図２Ａ