SILICON CARBIDE EPITAXIAL SUBSTRATE, AND PRODUCTION METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE

• Main Authors: HIRATSUKA KENJI, NISHIGUCHI TARO
• Format: Patent
• Language: English; Japanese
• Published: 04.03.2021
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a silicon carbide epitaxial substrate capable of reducing the translocation rows of a half loop arranged along a straight line perpendicular to an off direction, and a method for manufacturing a silicon carbide semiconductor device.SOLUTION: A silicon carbide epitaxial substrate comprises a silicon carbide single crystal substrate and a silicon carbide layer. The silicon carbide layer contains a face contacting the silicon carbide single crystal substrate, and a second principal plane on the opposite side. The second principal plane is a face, in which a "0001" plane is inclined in an off direction. The maximum diameter of the second principal plane is 100 mm or more. The second principal plane has an outer peripheral region within 3 mm from the outer edge of the second principal plane, and a center region enclosed by the outer peripheral region. The center region has first translocation rows of a first half loop arranged along a vertical straight line with respect to an off direction. The first half loop contains a pair of penetrate edge dislocations exposed to the second principal face. The surface density of the first translocation rows in the center region is 10 rows/cm2 or less.SELECTED DRAWING: Figure 1 【課題】オフ方向に対して垂直な直線に沿って並ぶハーフループの転位列を低減可能な炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法を提供する。【解決手段】炭化珪素エピタキシャル基板は、炭化珪素単結晶基板と、炭化珪素層とを有する。炭化珪素層は、炭化珪素単結晶基板と接する面と反対側の第２主面を含む。第２主面は、｛０００１｝面がオフ方向に傾斜した面である。第２主面の最大径は、１００ｍｍ以上である。第２主面は、第２主面の外縁から３ｍｍ以内の外周領域と、外周領域に取り囲まれた中央領域とを有する。中央領域には、オフ方向に対して垂直な直線に沿って並ぶ第１ハーフループの第１転位列がある。第１ハーフループは、第２主面に露出する一対の貫通刃状転位を含む。中央領域における第１転位列の面密度は、１０本／ｃｍ２以下である。【選択図】図１