PLASMA PROCESSING DEVICE, AND METHOD FOR MAINTAINING INSIDE OF PROCESS CHAMBER OF PLASMA PROCESSING DEVICE

• Main Authors: MIZOTA KOHEI, OKAMOTO SUSUMU, INOKUCHI ATSUTOMO
• Format: Patent
• Language: English; Japanese
• Published: 01.03.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a technique for decreasing a deposit produced by etching on a side wall of a process chamber.SOLUTION: A plasma processing device according to one exemplary embodiment comprises: a gas-supplying system for supplying a process gas into a process chamber; a plasma source for exciting the process gas supplied by the gas-supplying system; a support part for holding a workpiece in the process chamber; a gas-exhaust system for evacuating space in the process chamber; a plurality of electrode plates provided on an inner wall of the process chamber; a plurality of insulating parts for electrically insulating the plurality of electrode plates from each other; a DC power source for applying a DC voltage to each of the plurality of electrode plates independently; and a control part for performing control so as to apply the DC voltage to each of the plurality of electrode plates during execution of plasma etching or after the plasma etching.SELECTED DRAWING: Figure 1 【課題】エッチングによって処理容器の側壁に生じる付着物を低減するための技術を提供する。【解決手段】一つの例示的実施形態のプラズマ処理装置において、ガス供給系は処理容器内に処理ガスを供給し、プラズマ源はガス供給系によって供給される処理ガスを励起させ、支持部は処理容器内において被処理体を保持し、排気系は処理容器内の空間を排気し、複数の電極板は処理容器の内壁に設けられ、複数の絶縁部は複数の電極板を互いに電気的に絶縁し、直流電源は複数の電極板のそれぞれに独立に直流電圧を印加し、制御部はプラズマエッチングの実行中又はプラズマエッチングの終了後において複数の電極板のそれぞれに直流電圧の印加を行うように制御する。【選択図】図１