RESIST MATERIAL AND PATTERNING PROCESS

To provide a resist material that offers high sensitivity and small LWR and CDU, regardless of whether it is a positive resist material or a negative one, and a patterning process using the same.SOLUTION: A resist material comprises a sulfonium salt of a carboxylic acid having an iodized or brominat...

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Bibliographic Details
Main Authors OHASHI MASAKI, HATAKEYAMA JUN, FUJIWARA NORIYUKI
Format Patent
LanguageEnglish
Japanese
Published 01.03.2021
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:To provide a resist material that offers high sensitivity and small LWR and CDU, regardless of whether it is a positive resist material or a negative one, and a patterning process using the same.SOLUTION: A resist material comprises a sulfonium salt of a carboxylic acid having an iodized or brominated hydrocarbyl group (where the group does not include an iodized or brominated aromatic ring).SELECTED DRAWING: None 【課題】ポジ型レジスト材料においてもネガ型レジスト材料においても、高感度かつＬＷＲやＣＤＵが小さいレジスト材料、及びこれを用いるパターン形成方法を提供する。【解決手段】ヨウ素原子又は臭素原子で置換されたヒドロカルビル基（ただし、該基中にヨウ素原子又は臭素原子で置換された芳香環を含まない。）を有するカルボン酸のスルホニウム塩を含むレジスト材料。【選択図】なし
Bibliography:Application Number: JP20200072607