FILM DEPOSITION METHOD OF ELECTRIC WAVE TRANSMITTING FILM BY INSULATION CHROMIUM SPUTTERING AND RESIN MOLDING FOR LOCKING AND UNLOCKING STRUCTURE OF SMART ENTRY

• Main Authors: TAKASU DAISUKE, KAKIHARA KUNIHIRO, ORO TAKASHI
• Format: Patent
• Language: English; Japanese
• Published: 01.03.2021
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DETECTING MASSES OR OBJECTS; DIFFUSION TREATMENT OF METALLIC MATERIAL; GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MEASURING; METALLURGY; PERFORMING OPERATIONS; PHYSICS; REMOVABLE EXTERNAL PROTECTIVE COVERINGS SPECIALLY ADAPTED FORVEHICLES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TESTING; TRANSPORTING; VEHICLES IN GENERAL; WINDOWS, WINDSCREENS, NON-FIXED ROOFS, DOORS, OR SIMILARDEVICES FOR VEHICLES

To deposit an insulation electric wave transmitting film on a resin molding to enhance a designability with a chromium plating tune by using a sputtering method to deposit a chromium film on the resin molding in a plurality of times, and to deposit a film inexpensively using chromium.SOLUTION: A film deposition method of an electric wave transmitting film comprises: a crack base material formation step S2 where a crack base material having a thermal expansion coefficient different from that of chromium is applied on a surface of a resin molding W; a chromium film formation step S3 where a chromium film is deposited on the crack base material film deposited on the surface of the resin molding W in a sputtering apparatus; a buffer film formation step S5 where a transparent protection film as a buffer film is formed on the resin molding W with a chromium film deposited thereon in a thin film formation apparatus; a high lightness chromium film formation step S6 where a chromium film is further deposited; and a crack film formation step S7 where the resin molding W is finally heated to generate a crack on the chromium film due to a difference in a thermal expansion coefficient between the crack base material film and the chromium film.SELECTED DRAWING: Figure 1 【課題】スパッタリング方法を用いて、樹脂成形品にクロム膜を数回に分けて成膜をすることで、絶縁性の電波透過膜を樹脂成形品にクロムめっき調の意匠性を高めて成膜すると共に、クロムを使用して安価に成膜する。【解決手段】樹脂成形品Ｗの表面に、クロムと熱膨張率が異なるクラック基礎材料を塗布するクラック基礎材膜形成工程Ｓ２と、スパッタリング装置内において、樹脂成形品Ｗ表面に成膜されたクラック基礎材膜に、クロム膜を成膜するクロム膜成膜工程Ｓ３と、次に、薄膜形成装置において、クロム膜が成膜された樹脂成形品Ｗに、緩衝膜としての透明保護膜を形成する緩衝膜形成工程Ｓ５と、更にクロム膜を成膜する高明度クロム膜成膜工程Ｓ６と、最後に樹脂成形品Ｗを加熱し、クラック基礎材膜とクロム膜の熱膨張率の相違によりクロム膜にクラックを生じさせるクラック膜形成工程Ｓ７と、から成る。【選択図】図１