FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS

• Main Authors: YOSHIMITSU SATORU, KADOTA TAICHI, OTA KAZUKI
• Format: Patent
• Language: English; Japanese
• Published: 01.03.2021
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a technique capable of forming a metal-containing nitride film including silicon and having desired film properties.SOLUTION: A film deposition method for depositing a metal-containing nitride film including silicon comprises the steps of: supplying metal-containing gas to the inside of a treatment vessel storing a substrate; supplying silicon-containing gas to the inside of the treatment vessel; and supplying a nitrogen containing gas to the inside of the treatment vessel. The step of supplying the nitrogen-containing gas after performing the step of supplying the metal-containing gas and the step of supplying the silicon-containing gas n times (n is one or more integers) in this order is repeatedly performed m times (m is one or more integers) in this order.SELECTED DRAWING: Figure 1 【課題】所望の膜特性を有するシリコンが含有された金属含有窒化膜を形成できる技術を提供する。【解決手段】シリコンが含有された金属含有窒化膜を成膜する成膜方法であって、基板が収容された処理容器内に金属含有ガスを供給する工程と、前記処理容器内にシリコン含有ガスを供給する工程と、前記処理容器内に窒素含有ガスを供給する工程と、を有し、前記金属含有ガスを供給する工程と前記シリコン含有ガスを供給する工程とをこの順にｎ回（ｎは１以上の整数）実行した後、前記窒素含有ガスを供給する工程を実行することをこの順にｍ回（ｍは１以上の整数）繰り返す、成膜方法が提供される。【選択図】図１