SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVING DEVICE, VEHICLE, AND ELEVATOR

• Main Authors: KYOGOKU SHINYA, OSHIMA TOSHIYUKI, IIJIMA RYOSUKE
• Format: Patent
• Language: English; Japanese
• Published: 22.02.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device capable of reducing on-resistance.SOLUTION: A semiconductor device includes: a silicon carbide layer located between a first electrode and a second electrode and having a first surface and a second surface opposite to the first surface, the silicon carbide layer including a trench located in a side of the first surface and having a first portion and a second portion closer to the first portion, a width of the second surface being smaller than that of the first portion, an n type first silicon carbide region, a p type second silicon carbide region between the first silicon carbide region and the first surface, a p type third silicon carbide region located between the second silicon carbide region and the first surface and having a p type impurity concentration lower than that of the second silicon carbide region, an n type fourth silicon carbide region between the third silicon carbide region and the first surface, and an n type fifth silicon carbide region located between the second portion and the second silicon carbide region and having an n type impurity concentration higher than that of the first silicon carbide region; and a gate electrode located in the trench.SELECTED DRAWING: Figure 1 【課題】オン抵抗の低減が可能な半導体装置を提供する。【解決手段】実施形態の半導体装置は、第１の電極と第２の電極との間に位置し、第１の面と、第１の面に対向する第２の面と、を有する炭化珪素層であって、第１の面の側に位置し、第１の部分と、第１の部分よりも第２の面に近く第１の部分よりも幅が小さい第２の部分と、を有するトレンチと、ｎ型の第１の炭化珪素領域と、第１の炭化珪素領域と第１の面との間のｐ型の第２の炭化珪素領域と、第２の炭化珪素領域と第１の面との間に位置し、第２の炭化珪素領域よりもｐ型不純物濃度が低いｐ型の第３の炭化珪素領域と、第３の炭化珪素領域と第１の面との間のｎ型の第４の炭化珪素領域と、第２の部分と第２の炭化珪素領域との間に位置し、第１の炭化珪素領域よりもｎ型不純物濃度の高いｎ型の第５の炭化珪素領域と、を有する炭化珪素層と、トレンチの中に位置するゲート電極と、を備える。【選択図】図１