SEMICONDUCTOR DEVICE

• Main Authors: TAKADA YOSHIHISA, KAGEYAMA SATOSHI
• Format: Patent
• Language: English; Japanese
• Published: 22.02.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device capable of further improving adhesion between a wiring layer and an insulating layer covering the wiring layer.SOLUTION: A semiconductor device includes: a wiring layer 20 having a main surface 201 and a rear surface 202 which respectively face opposite sides in a thickness direction z; a first insulating layer 11 covering an entirety of the rear surface 202; a second insulation layer 12 in contact with the main surface 201; a semiconductor element facing the second insulation layer 12 and mounted on the wiring layer 20; and a sealing resin 40 in contact with the second insulation layer 12 and covering the semiconductor element. Surface roughness sr1 of the main surface 201 is larger than surface roughness sr2 of the rear surface 202.SELECTED DRAWING: Figure 10 【課題】 配線層と、当該配線層の上を覆う絶縁層との密着性を、より向上させることが可能な半導体装置を提供する。【解決手段】 厚さ方向ｚにおいて互いに反対側を向く主面２０１および裏面２０２を有する配線層２０と、裏面２０２の全体を覆う第１絶縁層１１と、主面２０１に接する第２絶縁層１２と、第２絶縁層１２に対向し、かつ配線層２０に搭載された半導体素子と、第２絶縁層１２に接し、かつ前記半導体素子を覆う封止樹脂４０と、を備え、主面２０１の表面粗さｓｒ１は、裏面２０２の表面粗さｓｒ２よりも大である。【選択図】 図１０