EXPOSURE METHOD

To provide an exposure method capable of performing precise and high-accuracy positioning of an exposure position corresponding to changes of relative positions of an exposure optical system and imaging means.SOLUTION: An exposure method has: a pattern central position acquisition process (Step 201...

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Bibliographic Details
Main Authors TANAKA YOSUKE, HARA SHIRO, ISHIDA YUKI
Format Patent
LanguageEnglish
Japanese
Published 18.02.2021
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:To provide an exposure method capable of performing precise and high-accuracy positioning of an exposure position corresponding to changes of relative positions of an exposure optical system and imaging means.SOLUTION: An exposure method has: a pattern central position acquisition process (Step 201 to Step 204) of detecting the central position of a pattern for detection by DMD; and an alignment mark central position acquisition process (Step 503 and Step 504) of detecting the central position of an alignment mark formed on a wafer. Further, the method has a stage movement amount calculation process (Step 505) of calculating a movement amount of a wafer stage which is necessary for matching the central position of the alignment mark and the central position of the pattern for detection (the central position of an exposure pattern).SELECTED DRAWING: Figure 6 【課題】露光光学系と撮像手段との相対的な位置の変動に対応した、正確、かつ、高精度な露光位置の位置合わせが可能な露光方法を提供する。【解決手段】露光方法は、ＤＭＤにより検出用パターンの中心位置を検出するパターン中心位置取得工程（ステップ２０１〜ステップ２０４）と、ウェハに形成されたアライメントマークの中心位置を検出するアライメントマーク中心位置取得工程（ステップ５０３及びステップ５０４）を有する。更に、アライメントマークの中心位置と、検出用パターンの中心位置（露光パターンの中心位置）とを一致させるために必要な、ウェハステージの移動量を算出するステージ移動量算出工程（ステップ５０５）を有する。【選択図】図６
Bibliography:Application Number: JP20190137707