PHOTOELECTRIC CONVERTER

• Main Authors: ISHII MASATO, SAITO JUN, OKAMOTO CHIKAO
• Format: Patent
• Language: English; Japanese
• Published: 04.02.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a photoelectric conversion element capable of restraining increase in man hours while restraining degradation in characteristics, and to provide a manufacturing method of the photoelectric conversion element.SOLUTION: A photoelectric conversion element includes a dielectric film 6 containing carbon and silicon on the first face 1a side of a first conductivity type or second conductivity type semiconductor substrate 1, a first conductivity type noncrystalline semiconductor film 3 and a second conductivity type noncrystalline semiconductor film 5 on the second face 1b side opposite to the first face 1a, a first electrode 7 on the first conductivity type noncrystalline semiconductor film 3, and a second 8 on the second conductivity type noncrystalline semiconductor film 5. The dielectric film 6 has a constitution represented by a formula SiCxNyOzFwHv (0<x, 0≤y<x, 0≤z<x, 0≤w<x and 0≤v). The dielectric film 6 is the outermost film. The photoelectric conversion element further includes a silicon nitride film 16 between the semiconductor substrate 1 and the dielectric film 6.SELECTED DRAWING: Figure 1 【課題】特性の低下を抑えつつ、工数の増加も抑えることができる光電変換素子および光電変換素子の製造方法を提供する。【解決手段】光電変換素子は、第１導電型または第２導電型の半導体基板１の第１の面１ａ側の炭素と珪素とを含む誘電体膜６と、第１の面１ａと反対側の第２の面１ｂ側の第１導電型非晶質半導体膜３および第２導電型非晶質半導体膜５と、第１導電型非晶質半導体膜３上の第１電極７と、第２導電型非晶質半導体膜５上の第２電極８とを備えている。誘電体膜６はＳｉＣxＮyＯzＦwＨv（０＜ｘ、０≦ｙ＜ｘ、０≦ｚ＜ｘ、０≦ｗ＜ｘおよび０≦ｖ）の式で表わされる組成を有している。誘電体膜６は最外膜である。半導体基板１と誘電体膜６との間に窒化シリコン膜１６をさらに備える。【選択図】図１