DOUBLE-SIDED MOUNTING BOARD, MANUFACTURING METHOD OF DOUBLE-SIDED MOUNTING BOARD, AND SEMICONDUCTOR LASER

• Main Authors: AOKI HISASHI, TAKEMORI HIDEAKI, KIKUCHI NAOTO
• Format: Patent
• Language: English; Japanese
• Published: 28.01.2021
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DEVICES USING STIMULATED EMISSION; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a double-sided mounting board, specifically a single crystal SiC double-sided mounting board in which a short circuit between the front side and the back side due to a micropipe defect can be prevented.SOLUTION: A double-sided mounting board 10 is a double-sided mounting board made of single-crystal silicon carbide, and has a multilayer structure including a first wiring film material 2am that has flowed in from a first wiring film 2a having a thin film formed on the surface of a first component, an insulating film material 3m that has flowed in from an insulating film 3 having a thin film formed on the surface of a second component, which has a front and back relationship with the surface of the first component, and a second wiring film material 2bm that has flowed in from a second wiring film 2b that has a thin film formed on the surface of the second component in the defect inner wall surface portion of a micropipe 8 which is a crystal defect that occurs in a manufacturing stage of the double-sided mounting board.SELECTED DRAWING: Figure 1 【課題】単結晶ＳｉＣ両面実装基板において、マイクロパイプ欠陥による表面側と裏面側との短絡を防止することができる両面実装基板を提供する。【解決手段】両面実装基板１０は、単結晶炭化ケイ素の両面実装基板であって、両面実装基板の製造段階で生じる結晶欠陥であるマイクロパイプ８の欠陥内壁面部において、第１の部品面に薄膜成膜した第１の配線膜２ａから流入した第１の配線膜材２ａｍと、第１の部品面と表裏関係にある第２の部品面に薄膜成膜した絶縁膜３から流入した絶縁膜材３ｍと、第２の部品面に薄膜成膜した第２の配線膜２ｂから流入した第２の配線膜材２ｂｍとにより多層膜構造体を有する。【選択図】図１