SEMICONDUCTOR DEVICE

• Main Authors: TABATA HIROSHI, SHIBUSAWA MAKOTO, KIMURA HIROYUKI, OGAWA YASUHIRO, MORITA TETSUO
• Format: Patent
• Language: English; Japanese
• Published: 21.01.2021
• Subjects: ADVERTISING; BASIC ELECTRIC ELEMENTS; CRYPTOGRAPHY; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; DISPLAY; DISPLAYING; EDUCATION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; LABELS OR NAME-PLATES; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEALS; SEMICONDUCTOR DEVICES; SIGNS; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

To provide a semiconductor device exhibiting excellent electrical characteristics, a display device containing the semiconductor device, and a manufacturing method of the display device.SOLUTION: A display device having a capacitance having a first electrode, a first insulating film on the first electrode, and a second electrode on the first insulating film, and a first transistor on the capacitance is provided. The first transistor includes the second electrode, a second insulating film on the second electrode, an oxide semiconductor film on the second insulating film, and a first source electrode and a first drain electrode that are located on the oxide semiconductor film, and electrically connected to the oxide semiconductor film.SELECTED DRAWING: Figure 4 【課題】優れた電気特性を示す半導体装置、ならびにそれを含有する表示装置、および表示装置の作製方法を提供する。【解決手段】第１の電極、第１の電極上の第１の絶縁膜、および第１の絶縁膜上の第２の電極を有する容量と、容量上の第１のトランジスタを有する表示装置が提供される。第１のトランジスタは、第２の電極、第２の電極上の第２の絶縁膜、第２の絶縁膜上の酸化物半導体膜、および酸化物半導体膜上に位置し、酸化物半導体膜と電気的に接続される第１のソース電極と第１のドレイン電極を有する。【選択図】図４