GAS INTRODUCTION STRUCTURE, HEAT TREATMENT DEVICE, AND GAS SUPPLY METHOD

• Main Authors: OGAWA SATORU, SON SUNG DUK, KITAMURA MASAYUKI, HISHIYA SHINGO
• Format: Patent
• Language: English; Japanese
• Published: 14.01.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a technique capable of suppressing the deposition of a film inside a gas supply pipe and supplying gas evenly.SOLUTION: A gas introduction structure according to the present disclosure is a gas introduction structure that supplies a processing gas into a vertically long processing contain...