GAS INTRODUCTION STRUCTURE, HEAT TREATMENT DEVICE, AND GAS SUPPLY METHOD

• Main Authors: OGAWA SATORU, SON SUNG DUK, KITAMURA MASAYUKI, HISHIYA SHINGO
• Format: Patent
• Language: English; Japanese
• Published: 14.01.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a technique capable of suppressing the deposition of a film inside a gas supply pipe and supplying gas evenly.SOLUTION: A gas introduction structure according to the present disclosure is a gas introduction structure that supplies a processing gas into a vertically long processing container, and has a plurality of gas discharge holes that extend along the longitudinal direction of the processing container and formed along the longitudinal direction in the processing container, is provided with a processing gas supply pipe into which the processing gas is introduced from one end to the other end, and diluted gas is supplied to the side closer to the other end than the one end of the processing gas supply pipe.SELECTED DRAWING: Figure 5 【課題】ガス供給管の内部への膜の堆積を抑制し、且つガスを均等に供給できる技術を提供する。【解決手段】本開示の一態様によるガス導入構造は、縦長の処理容器内に処理ガスを供給するガス導入構造であって、前記処理容器内において該処理容器の長手方向に沿って延びると共に該長手方向に沿って形成された複数のガス吐出孔を有し、一端から他端に向けて処理ガスが導入される処理ガス供給管を備え、前記処理ガス供給管の前記一端よりも前記他端に近い側に希釈ガスが供給される。【選択図】図５