METHOD AND SYSTEM FOR MEASURING THICKNESS OF SEMICONDUCTOR WAFERS

• Main Authors: TAKANASHI KEIICHI, KIHARA YOSHIYUKI, MIYAZAKI YUJI
• Format: Patent
• Language: English; Japanese
• Published: 14.01.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MEASURING; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS; PHYSICS; SEMICONDUCTOR DEVICES; TESTING

To provide a semiconductor wafer thickness measurement method which allows for suppressing variation in thickness measurements due to in-plane temperature variation when making quick thickness measurement of a semiconductor wafer at multiple points in a plane thereof by the spectral interference method.SOLUTION: A method of making thickness measurement of a semiconductor wafer at multiple points in a plane thereof by the spectral interference method comprises: obtaining information on effect of semiconductor wafer temperature on semiconductor wafer refractive index in advance; measuring temperature of the semiconductor wafer at each measurement point; and determining a refractive index value of the semiconductor wafer to be used to compute a measured thickness value at each measurement point based on the information and the measured semiconductor wafer temperature.SELECTED DRAWING: Figure 4 【課題】半導体ウェーハの厚みを面内の複数点において分光干渉方式で短時間に測定する際に、面内の温度ばらつきに起因する厚み測定値のばらつきを抑制することが可能な半導体ウェーハの厚み測定方法を提供する。【解決手段】半導体ウェーハの厚みを面内の複数点において分光干渉方式で測定する際に、半導体ウェーハの温度が半導体ウェーハの屈折率に与える影響に関する情報を予め求め、各測定位置での半導体ウェーハの温度を測定し、前記情報と、測定した半導体ウェーハの温度とに基づいて、各測定位置での厚み測定値の算出に用いる半導体ウェーハの屈折率の値を決定する。【選択図】図４