SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD

• Main Authors: FUJITSU SEIGO, OGURA YASUSHI, SHIOKAWA TOSHIYUKI, SATO HIDEAKI, ZHANG JIAN, KONO HIROSHI, YOSHIDA HIROSHI, INADA TAKASHI, KONISHI TERUAKI
• Format: Patent
• Language: English; Japanese
• Published: 07.01.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a substrate processing device and a substrate processing method which allow an etching time to be shortened.SOLUTION: A substrate processing device according to an embodiment hereof comprises: a substrate processing tank ; a first circulation line; a mixing part; a supply line; and a silicon supplying part. The substrate processing tank has an inner tank and an outer tank provided around the inner tank, and an etching process is performed by immersing a substrate in an etchant pooled in the inner tank. The first circulation line connects the outer tank and the inner tank and causes the etchant having overflowed from the inner tank to the outer tank to circulate from the outer tank to the inner tank. The mixing part produces a mixture solution when being supplied with a new liquid and a silicon-containing compound or liquid containing a silicon-containing compound, and it has a mixing tank for pooling the mixture solution thus produced. The supply line connects the outer tank and the mixing part, and supplies the outer tank with the mixture solution mixed by the mixing part. The silicon supplying part supplies the outer tank with the liquid containing the silicon-containing compound after start of the etching process.SELECTED DRAWING: Figure 2 【課題】エッチング処理時間を短縮する基板処理装置、および基板処理方法を提供する。【解決手段】実施形態に係る基板処理装置は、基板処理装置と、第１循環ラインと、混合部と、供給ラインと、シリコン供給部とを備える。基板処理槽は、内槽と内槽の周囲に設けられる外槽とを有し、内槽に貯留されたエッチング液に基板を浸漬することによってエッチング処理を行う。第１循環ラインは、外槽と内槽とを接続し、内槽から外槽へとオーバーフローしたエッチング液を外槽から内槽へと循環させる。混合部は、新液と、シリコン含有化合物またはシリコン含有化合物を含む液体とが供給されて混合液を生成し、かつ生成された混合液を貯留する混合タンクを含む。供給ラインは、外槽と混合部とを接続し、混合部によって混合した混合液を外槽に供給する。シリコン供給部は、エッチング処理が開始された後に、シリコン含有化合物を含む液体を外槽に供給する。【選択図】図２