SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

To provide a semiconductor device capable of suppressing deterioration of reliability be caused by a terminal electrode.SOLUTION: Provided is a semiconductor device 1 including: a semiconductor layer 2 having a first main surface 3 and a roughened second main surface 4; a gate terminal electrode 12...

Full description

Saved in:
Bibliographic Details
Main Authors ISE KOTA, MIURA YOSHIKATSU, MATSUMOTO YUTAKA, SAITO YASUNORI
Format Patent
LanguageEnglish
Japanese
Published 17.12.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:To provide a semiconductor device capable of suppressing deterioration of reliability be caused by a terminal electrode.SOLUTION: Provided is a semiconductor device 1 including: a semiconductor layer 2 having a first main surface 3 and a roughened second main surface 4; a gate terminal electrode 12 and a source terminal electrode 14 formed on the first main surface 3; an organic insulating layer 18 partially covering the gate terminal electrode 12 and the source terminal electrode 14 on the first main surface 3; and a drain terminal electrode 22 directly connected to the second main surface 4 via no silicide layer.SELECTED DRAWING: Figure 1 【課題】端子電極に起因する信頼性の低下を抑制できる半導体装置を提供する。【解決手段】第１主面３および粗面化された第２主面４を有する半導体層２と、第１主面３の上に形成されたゲート端子電極１２およびソース端子電極１４と、第１主面３の上においてゲート端子電極１２およびソース端子電極１４を部分的に被覆する有機絶縁層１８と、シリサイド層を介することなく第２主面４に直接接続されたドレイン端子電極２２と、を含む半導体装置１を提供する。【選択図】図１
Bibliography:Application Number: JP20190108865