IMAGING DEVICE
To provide an imaging device including a pixel having a plurality of photoelectric conversion units, and capable of acquiring an appropriate image according to an amount of received light and improving focus detection accuracy.SOLUTION: An imaging device includes a plurality of two-dimensionally arr...
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Main Authors | , , , |
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Format | Patent |
Language | English Japanese |
Published |
19.11.2020
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Subjects | |
Online Access | Get full text |
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Summary: | To provide an imaging device including a pixel having a plurality of photoelectric conversion units, and capable of acquiring an appropriate image according to an amount of received light and improving focus detection accuracy.SOLUTION: An imaging device includes a plurality of two-dimensionally arranged pixels. At least some pixels among the plurality of pixels comprise: first and second photoelectric conversion units each of which includes a first semiconductor region of a first conductivity type provided on a semiconductor substrate and accumulating a first semiconductor region of a first conductivity type which accumulates the signal charge generated due to photoelectric conversion; a first separation part provided on the semiconductor substrate between the first photoelectric conversion unit and the second photoelectric conversion unit and composed of a second semiconductor region forming a first potential barrier for a signal charge of the first semiconductor region; and a second separation part provided on the semiconductor substrate between the first photoelectric conversion unit and the second photoelectric conversion unit and composed of a trench isolation forming a second potential barrier higher than the first potential barrier for the signal charge of the first semiconductor region.SELECTED DRAWING: Figure 3
【課題】複数の光電変換部を有する画素を有する撮像装置において、受光光量に応じた適切な画像の取得と焦点検出精度の向上とを実現しうる撮像装置を提供する。【解決手段】2次元状に配された複数の画素を有する撮像装置であって、複数の画素のうちの少なくとも一部の画素は、半導体基板に設けられ、光電変換により生じた信号電荷を蓄積する第1導電型の第1の半導体領域をそれぞれが含む第1及び第2の光電変換部と、第1の光電変換部と前記第2の光電変換部との間の半導体基板に設けられ、第1の半導体領域の信号電荷に対して第1のポテンシャル障壁を形成する第2の半導体領域からなる第1の分離部と、第1の光電変換部と第2の光電変換部との間の半導体基板に設けられ、第1の半導体領域の信号電荷に対して第1のポテンシャル障壁よりも高い第2のポテンシャル障壁を形成するトレンチ分離からなる第2の分離部と、を有する。【選択図】図3 |
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Bibliography: | Application Number: JP20200120693 |