SILICON-CONTAINING COMPOUND FOR FORMING SILICON-CONTAINING THIN FILM AND FORMING METHOD OF SILICON-CONTAINING THIN FILM

• Main Authors: MURATA ITSUHITO, MIZUNO MICHINORI, SUZUKI KATSUMASA
• Format: Patent
• Language: English; Japanese
• Published: 19.11.2020
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a silicon-containing compound for forming a silicon-containing thin film, capable of forming a high-quality silicon-containing thin film at a film formation temperature of less than 500°C using chemical vapor deposition while producing a small amount of by-products.SOLUTION: When forming a silicon-containing thin film by chemical vapor deposition, a chloroaminosilane compound having a specific structure is used as a silicon-containing compound.SELECTED DRAWING: None 【課題】化学気相成長法を用い、５００℃未満の成膜温度で良質なシリコン含有薄膜を形成可能であり、副生成物の生成量が少ないシリコン含有薄膜形成用シリコン含有化合物を提供する。【解決手段】化学気相成長法によってシリコン含有薄膜を形成する際、特定の構造を有するクロロアミノシラン化合物をシリコン含有化合物として用いる。【選択図】なし