MAGNETIC SENSOR
To provide a magnetic sensor with which it is possible to reduce a 1/f noise by mechanically displacing a magnetic path, without using a MEMS structure that requires a high temperature process.SOLUTION: A magnetic sensor according to the present invention comprises: a sensor chip 10 including a magn...
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Main Authors | , , |
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Format | Patent |
Language | English Japanese |
Published |
19.11.2020
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Subjects | |
Online Access | Get full text |
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Summary: | To provide a magnetic sensor with which it is possible to reduce a 1/f noise by mechanically displacing a magnetic path, without using a MEMS structure that requires a high temperature process.SOLUTION: A magnetic sensor according to the present invention comprises: a sensor chip 10 including a magneto-sensitive element R provided in a magnetic path formed by a magnetic gap G1 between external magnetic substances 21, 22; and a mechanical drive unit 30 having a piezoelectric layer 32 and a bypass magnetic substance layer 31. The mechanical drive unit 30 includes a fixed region 30A fixed to the external magnetic substance 22 and a displacement region 30B not fixed to the external magnetic substance 22, the displacement region 30B having an overlapping with a magnetic gap G1. According to the present invention, unlike a MEMS structure, a structure is adopted that the mechanical drive unit is fixed to the second external magnetic substance, so there is no need to carry out a high temperature process after forming the magneto-sensitive element.SELECTED DRAWING: Figure 7
【課題】高温プロセスが必要なMEMS構造を用いることなく、磁路を機械的に変位させることによって1/fノイズを低減することが可能な磁気センサを提供する。【解決手段】本発明による磁気センサは、外部磁性体21,22との間の磁気ギャップG1によって形成される磁路上に設けられた感磁素子Rを含むセンサチップ10と、圧電体層32とバイパス磁性体層31を有する機械的駆動部30とを備える。機械的駆動部30は、外部磁性体22に固定された固定領域30Aと、外部磁性体22に固定されていない変位領域30Bとを有し、変位領域30Bは、磁気ギャップG1と重なりを有している本発明によれば、MEMS構造とは異なり、機械的駆動部を第2の外部磁性体に固定した構造を有していることから、感磁素子を形成した後に高温プロセスを行う必要がない。【選択図】図7 |
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Bibliography: | Application Number: JP20190093488 |