HALOGENATED AMINO SILANE COMPOUND, THIN FILM-FORMING COMPOSITION AND SILICON-CONTAINING THIN FILM

• Main Authors: MURATA ITSUHITO, MIZUNO MICHINORI, SUZUKI KATSUMASA
• Format: Patent
• Language: English; Japanese
• Published: 19.11.2020
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a novel raw material compound that can be employed to form a silicon-containing thin film by chemical vapor deposition.SOLUTION: The present invention provides a halogenated amino silane compound represented by the formula 1 or the formula 2.SELECTED DRAWING: None 【課題】化学気相成長法を用いたシリコン含有薄膜の形成に適用可能な、新規な原料化合物を提供する。【解決手段】下式１または下式２で表されるハロゲン化アミノシラン化合物。［化１］［化２］【選択図】なし