SILICON CARBIDE SEMICONDUCTOR MODULE AND MANUFACTURING METHOD THEREOF

• Main Authors: UETA SHUNSAKU, HORI TSUTOMU
• Format: Patent
• Language: English; Japanese
• Published: 12.11.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To improve the predictability of changes in the characteristics of a silicon carbide semiconductor module as a whole.SOLUTION: A silicon carbide semiconductor module includes a circuit board and a plurality of silicon carbide semiconductor chips. The circuit board has a first main surface. The plurality of silicon carbide semiconductor chips are mounted on a circuit board and have a second main surface facing the first main surface. In each of the plurality of silicon carbide semiconductor chips, a distance between the center of the second main surface and the first main surface is larger than the distance between the inner circumference and the first main surface by 0.5 mm in a direction parallel to the first main surface from the outer peripheral edge of the second main surface toward the center.SELECTED DRAWING: Figure 1 【課題】炭化珪素半導体モジュール全体としての特性変化の予測可能性を向上する。【解決手段】炭化珪素半導体モジュールは、回路基板と、複数の炭化珪素半導体チップとを有する。回路基板は、第１主面を有する。複数の炭化珪素半導体チップは、回路基板に実装され、かつ第１主面に対向する第２主面を有する。複数の炭化珪素半導体チップの各々において、第２主面の中心と第１主面との距離は、第２主面の外周端から中心に向かって第１主面に平行な方向に０．５ｍｍ離れた内周部と第１主面との距離よりも大きい。【選択図】図１