SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD
To provide a silicon carbide single crystal substrate, a silicon carbide epitaxial substrate and a silicon carbide semiconductor device manufacturing method which can reduce stacking fault which extends during epitaxial growth.SOLUTION: A silicon carbide single crystal substrate 10 has a first princ...
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Main Author | |
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Format | Patent |
Language | English Japanese |
Published |
05.11.2020
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Subjects | |
Online Access | Get full text |
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Summary: | To provide a silicon carbide single crystal substrate, a silicon carbide epitaxial substrate and a silicon carbide semiconductor device manufacturing method which can reduce stacking fault which extends during epitaxial growth.SOLUTION: A silicon carbide single crystal substrate 10 has a first principal surface 11 and an orientation flat 31. The orientation flat 31 extends in a <11-20> direction. The first principal surface 11 includes an end region 103 within a range of 5 mm from an outer periphery 105 of the first principal surface 11. In a direction perpendicular to the first principal surface 11, a warpage amount 101 of the end region 103 which continues to the orientation flat 31 is equal to or less than 3 μm.SELECTED DRAWING: Figure 1
【課題】エピタキシャル成長中に伸展する積層欠陥を低減可能な炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法を提供する。【解決手段】炭化珪素単結晶基板10は、第1主面11と、オリエンテーションフラット31とを有している。オリエンテーションフラット31は、<11−20>方向に延在する。第1主面11は、第1主面11の外周105から5mm以内の端部領域103を含む。第1主面11に対して垂直な方向において、オリエンテーションフラット31と連なる端部領域103の反り量101は、3μm以下である。【選択図】図1 |
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Bibliography: | Application Number: JP20200122042 |