SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD

• Main Author: HORI TSUTOMU
• Format: Patent
• Language: English; Japanese
• Published: 05.11.2020
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a silicon carbide single crystal substrate, a silicon carbide epitaxial substrate and a silicon carbide semiconductor device manufacturing method which can reduce stacking fault which extends during epitaxial growth.SOLUTION: A silicon carbide single crystal substrate 10 has a first principal surface 11 and an orientation flat 31. The orientation flat 31 extends in a <11-20> direction. The first principal surface 11 includes an end region 103 within a range of 5 mm from an outer periphery 105 of the first principal surface 11. In a direction perpendicular to the first principal surface 11, a warpage amount 101 of the end region 103 which continues to the orientation flat 31 is equal to or less than 3 μm.SELECTED DRAWING: Figure 1 【課題】エピタキシャル成長中に伸展する積層欠陥を低減可能な炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法を提供する。【解決手段】炭化珪素単結晶基板１０は、第１主面１１と、オリエンテーションフラット３１とを有している。オリエンテーションフラット３１は、＜１１−２０＞方向に延在する。第１主面１１は、第１主面１１の外周１０５から５ｍｍ以内の端部領域１０３を含む。第１主面１１に対して垂直な方向において、オリエンテーションフラット３１と連なる端部領域１０３の反り量１０１は、３μｍ以下である。【選択図】図１