DEPOSITION METHOD OF SILICON FILM

• Main Authors: HIGASHI DAISUKE, ANDO YASUNORI
• Format: Patent
• Language: English; Japanese
• Published: 29.10.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a deposition method of a silicon film which enables the deposition of an amorphous silicon film lower, in hydrogen content, than conventional one by CVD plasma technique even at a low substrate temperature.SOLUTION: A silicon film deposition method is arranged so as to form a silicon film having an amorphous structure on a substrate W set in a vacuum chamber 2 of a CVD plasma film deposition apparatus 100 by plasma. The method comprises the step of generating inductively-coupled plasma in a state in which the pressure in the vacuum chamber is kept at 100 mTorr or less while introducing gases into the vacuum chamber, thereby depositing a silicon film on the substrate of 300°C or below. In the method, SiF4 gas is used to generate the plasma as a main gas; and an inactive gas and a hydrogen gas are used as a dilution gas; the proportion of the hydrogen gas to a total volume of the main gas and the dilution gas is 6-35 vol.%.SELECTED DRAWING: Figure 1 【課題】ＣＶＤプラズマ法を用いて、低い基板温度でありながら、水素含有比率が従来より低いアモルファスシリコン膜の成膜を可能とするシリコン膜の成膜方法を提供する。【解決手段】ＣＶＤプラズマ成膜装置１００の真空槽２内に載置された基板Ｗ上に、プラズマを用いてアモルファス構造を有するシリコン膜を成膜するシリコン膜の成膜方法であって、プラズマの生成に、主ガスとしてＳｉＦ４ガスを、希釈用ガスとして不活性ガスおよび水素ガスを用い、主ガスと希釈用ガスとの全体に占める水素ガスの比率を６〜３５容量％とし、真空槽内に、ガスを導入しながら、真空槽内を１００ｍＴｏｒｒ以下の圧力に保持して、誘導結合型プラズマを生成させ、３００℃以下の基板上にシリコン膜を成膜する。【選択図】図１