POWER SEMICONDUCTOR MODULE

• Main Authors: MIYAZAWA KEI, SUGIKI AKIO, OKAMOTO TAKUYA, UMEKI MAKOTO
• Format: Patent
• Language: English; Japanese
• Published: 29.10.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a compact and lightweight power semiconductor module that does not require a large heat dissipation plate.SOLUTION: In a power semiconductor module 1, the lower surface of a power semiconductor element 4 is die-bonded to a circuit pattern 3 of a substrate 2 by metal particle sintering bonding, and the circuit pattern 3 and the upper surface of the power semiconductor element 4 are connected by ultrasonic wire bonding, and a terminal 7 is connected to the circuit pattern 3 to seal all connection portion with a resin 8. A circuit pattern 9 on the lower surface of the substrate 2 located directly below the power semiconductor element 4 is exposed from the resin 8. All connection portions of the power semiconductor module 1 have a melting point higher than the glass transition point of the sealing resin 8.SELECTED DRAWING: Figure 1 【課題】大型の放熱板を不要とするパワー半導体モジュールの小型軽量化を提供する。【解決手段】パワー半導体モジュール１において、基板２の回路パターン３にパワー半導体素子４の下面を金属粒子焼結結合でダイボンディング接続するとともに、回路パターン３とパワー半導体素子４の上面とを超音波ワイヤーボンディングで接続後、回路パターン３に端子７を接続し、全ての接続部分を樹脂８で封止する。パワー半導体素子４の直下方に位置する基板２の下面の回路パターン９は樹脂８から露出させる。パワー半導体モジュール１の全ての接続部分が、封止する樹脂８のガラス転移点よりも高い融点を有する。【選択図】図１