SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• Main Authors: TAJIMA JUNPEI, ONO HIROSHI, KURAGUCHI MASAHIKO, NUNOUE SHINYA, HIKOSAKA TOSHIKI
• Format: Patent
• Language: English; Japanese
• Published: 29.10.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device capable of improving characteristics thereof and a method for manufacturing the same.SOLUTION: According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor layers, and a first insulating layer. A position of the third electrode in a first direction from the first electrode to the second electrode is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The first semiconductor layer includes first to third partial regions. A second direction from the first partial region to the first electrode crosses the first direction. A direction from the second partial region toward the second electrode and a direction from the third partial region toward the third electrode is aligned with the second direction. A portion of the second semiconductor layer is between the third partial region and the third electrode. The first insulating layer includes a first insulating region. The first insulating region is between a portion of the second semiconductor layer and the third electrode. A concentration of hydrogen in the third partial region is less than 1/10 of a concentration of magnesium in the third partial region.SELECTED DRAWING: Figure 1 【課題】特性の向上が可能な半導体装置及びその製造方法を提供する。【解決手段】実施形態によれば、半導体装置は、第１〜第３電極、第１、第２半導体層、及び第１絶縁層を含む。第１電極から第２電極への第１方向における第３電極の位置は、第１方向における第１電極の位置と、第１方向における第２電極の位置と、の間にある。第１半導体層は、第１〜第３部分領域を含む。第１部分領域から第１電極への第２方向は、第１方向と交差する。第２部分領域から第２電極への方向、及び、第３部分領域から第３電極への方向は、第２方向に沿う。第２半導体層の一部は第３部分領域と第３電極との間にある。第１絶縁層は、第１絶縁領域を含む。第１絶縁領域は、第２半導体層の一部と、第３電極と、の間にある。第３部分領域における水素の濃度は、第３部分領域におけるマグネシウムの濃度の１／１０未満である。【選択図】図１