SEMICONDUCTOR DEVICE

• Main Authors: ENDO YUTA, SATO MIZUHO, SASAKI TOSHINARI, NODA KOSEI
• Format: Patent
• Language: English; Japanese
• Published: 01.10.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To manufacture a semiconductor device that has small variation in electrical characteristics and a high reliability, in a transistor using an oxide semiconductor.SOLUTION: An insulating layer containing silicon peroxide radical is used for an insulating layer contacted with an oxide semiconductor layer that forms a channel. Due to release of oxygen from the insulating layer, oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced, and thereby, a semiconductor device that has small variation in electrical characteristics and a high reliability can be manufactured.SELECTED DRAWING: Figure 1 【課題】酸化物半導体を用いたトランジスタにおいて、電気的特性の変動が小さく、信頼性の高い半導体装置を作製することを課題とする。【解決手段】チャネルを形成する酸化物半導体層に接する絶縁層に、シリコン過酸化ラジカルを含む絶縁層を用いる。絶縁層から酸素が放出されることにより、酸化物半導体層中の酸素欠損及び絶縁層と酸化物半導体層の界面準位を低減することができ、電気的特性の変動が小さく、信頼性の高い半導体装置を作製することができる。【選択図】図１