SILICON-BASED HARDMASK

To provide silicon-based hardmasks used in the manufacture of semiconductor devices, compositions for forming thin, silicon-containing antireflective coatings, and methods of using these compositions in the manufacture of electronic devices.SOLUTION: There is provided an organosiloxane polymer compr...

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Bibliographic Details
Main Authors SUZANNE M COLEY, PAUL J LABEAUME, YAMADA SHINTARO, BHOOSHAN POPERE, KIARIE CECILIA W, LI CUI
Format Patent
LanguageEnglish
Japanese
Published 01.10.2020
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CINEMATOGRAPHY
COMPOSITIONS BASED THEREON
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
MATERIALS THEREFOR
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
THEIR PREPARATION OR CHEMICAL WORKING-UP
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Summary:To provide silicon-based hardmasks used in the manufacture of semiconductor devices, compositions for forming thin, silicon-containing antireflective coatings, and methods of using these compositions in the manufacture of electronic devices.SOLUTION: There is provided an organosiloxane polymer comprising, as polymerized units, one or more first silane monomers having a C2-20 unsaturated hydrocarbyl moiety and a condensable silicon-containing moiety; one or more second silane monomers having two or more silicon-containing moieties joined by a C2-30 unsaturated linking group moiety, wherein at least one of the silicon-containing moieties is a condensable silicon-containing moiety; and one or more third silane monomers having a chromophore moiety and a condensable silicon-containing moiety. Silicon-containing antireflective coatings formed from these compositions can be easily removed during processing without requiring another removing step.SELECTED DRAWING: None 【課題】半導体デバイスの製造で使用されるケイ素ベースのハードマスクであり、薄いケイ素含有反射防止被覆を形成するための組成物、及び、電子デバイスの製造において前記組成物を使用する方法を提供する。【解決手段】重合単位としてＣ２−２０不飽和ヒドロカルビル部分及び縮合性ケイ素含有部分を有する、１つ以上の第１のシランモノマーと、Ｃ２−３０不飽和連結基部分により結合された２つ以上のケイ素含有部分を有する、１つ以上の第２のシランモノマーであって、ケイ素含有部分の少なくとも１つは縮合性ケイ素含有部分であるものと、発色団部分と縮合性ケイ素含有部分を有する、１つ以上の第３のシランモノマーと、を含む有機シロキサンポリマー。これらの組成物から形成されるケイ素含有反射防止被膜は別の除去工程の必要なく、加工時に容易に取り除くことができる。【選択図】なし
Bibliography:Application Number: JP20200095487