A-B CRYSTAL WITHOUT CRYSTAL LATTICE CURVATURE

• Main Authors: BERNDT WEINERT, HABEL FRANK, GUNNAR LEIBIGER
• Format: Patent
• Language: English; Japanese
• Published: 01.10.2020
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a single crystal formed of an III-V, IV-IV or II-VI compound semiconductor crystal, having inclusions or deposits having lower concentration compared with the conventional compound semiconductor crystal and nevertheless, having no- or extremely small curvature.SOLUTION: In the single crystal formed of an III-V, IV-IV or an II-VI compound semiconductor crystal, the concentration of III-, IV- or II- deposits and/or nonstoichiometric III-V-, IV-IV- or II-VI inclusions in the III-V-, IV-IV- or II-VI-crystal is 1×104 cm-3 at the maximum.SELECTED DRAWING: Figure 2 【課題】従来の化合物半導体結晶と比較して、より低い濃度のインクルージョンまたは析出物を有し、それにもかかわらず湾曲がないまたは湾曲が非常にわずかである、それぞれのＩＩＩ−Ｖ、ＩＶ−ＩＶまたはＩＩ−ＶＩ化合物半導体結晶の単結晶の提供。【解決手段】ＩＩＩ−、ＩＶ−またはＩＩ−の析出物および／またはＩＩＩ−Ｖ−、ＩＶ−ＩＶ−またはＩＩ−ＶＩ−結晶中の非化学量論的ＩＩＩ−Ｖ−、ＩＶ−ＩＶ−またはＩＩ−ＶＩインクルージョンの濃度が、最大で１×１０４ｃｍ−３であるＩＩＩ−Ｖ、ＩＶ−ＩＶまたはＩＩ−ＶＩ化合物半導体結晶の単結晶。【選択図】図２