SEMICONDUCTOR STORAGE DEVICE

• Main Authors: NAKATSUKA KEISUKE, KATSUMATA RYUTA, SHIMOJO YOSHIRO, KUBOTA YOSHITAKA, UCHIUMI TETSUAKI
• Format: Patent
• Language: English; Japanese
• Published: 24.09.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor storage device capable of improving operation reliability.SOLUTION: A semiconductor storage device of an embodiment comprises: a first conductive layer laminated in a Z direction and extending in an X direction; second and third conductive layers laminated in the Z direction and arranged separated from the first conductive layer in a Y direction; a contact plug CP2 extending in the Z direction; a memory trench MST extending in the Z direction between the second conductive layer and the third conductive layer, continuously provided around the contact plug, and surrounding a first region in which the contact plug is arranged; and a second region separating from the first region in the X direction and including a memory pillar MP penetrating the first conductive layer in the Z direction. The second conductive layer extends between the first region and the second region in the X direction, further extends in the Y direction, and is connected to the first conductive layer. The third conductive layer extends in the X direction on the side opposite to the second region of the first region, further extends in the Y direction, and is connected to the first conductive layer.SELECTED DRAWING: Figure 20 【課題】動作信頼性を向上させることが可能な半導体記憶装置を提供する。【解決手段】実施形態の半導体記憶装置は、Ｚ方向に積層され、Ｘ方向に延伸する第１導電層と、Ｚ方向に積層されＸ方向に延伸し、Ｙ方向に第１導電層と離れて配置された第２及び第３導電層と、Ｚ方向に延伸するコンタクトプラグＣＰ２と、第２導電層と第３導電層間でＺ方向に延伸し、コンタクトプラグの周囲に連続的に設けられ、コンタクトプラグが配置された第１領域を囲むメモリトレンチＭＳＴと、第１領域とＸ方向に離れ、第１導電層をＺ方向に貫通するメモリピラーＭＰを含む第２領域とを備える。第２導電層は、第１領域と第２領域との間でＸ方向に延伸し、さらにＹ方向に延伸して第１導電層と接続され、第３導電層は、第１領域の第２領域と反対側でＸ方向に延伸し、さらにＹ方向に延伸して第１導電層と接続される。【選択図】図２０